DocumentCode :
2820521
Title :
Polarization Characteristics of InGaAs/GaAs Vertical Cavity Surface Emitting Lasers Grown on GaAs
Author :
Takahashl, M. ; Vaccaro, P. ; Fujita, Kinya ; Watanabe, Toshio ; Mukaihara, Toshikazu ; Koyama, Fumio ; lga, K.
Author_Institution :
ATR optical & Radio Communications Research Laboratories 2-2 H ikaridai, Seika-cho, Soraku.gun, Kyoto 619-02 Japan
fYear :
1996
fDate :
8-13 Sept. 1996
Firstpage :
12
Lastpage :
12
Keywords :
Anisotropic magnetoresistance; Capacitive sensors; Crystallization; Gallium arsenide; Indium gallium arsenide; Optical polarization; Optical pumping; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on
Conference_Location :
Hamburg, Germany
Print_ISBN :
0-7803-3169-9
Type :
conf
DOI :
10.1109/CLEOE.1996.561969
Filename :
561969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2820521
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