DocumentCode
2820522
Title
CMP pressure control based on dual-modes controller
Author
Men, Yanwu ; Zhang, Hui ; Zhou, Kai ; Ye, Peiqing ; Lu, Xinchun
Author_Institution
State Key Lab. of Tribology, Tsinghua Univ., Beijing, China
fYear
2011
fDate
15-17 July 2011
Firstpage
6378
Lastpage
6382
Abstract
Chemical Mechanical Polishing (CMP) is the most effective wafer global planarization technology. The quality of polishing not only depends on slurry, but also depends on the precise control of polishing pressure. This paper presents a bang-bang+ dual-modes gain-variable PID controller which is used as the core control strategy to overcome the phenomena of long adjustment time, large overshooting and so on. The strategy has the advantages of the robustness, fast dynamic response of the bang-bang controller and the high steady-state accuracy of the gain-variable PID controller. Experiment results show that the dual-modes controller is feasible, practical and correct.
Keywords
bang-bang control; chemical mechanical polishing; dynamic response; multivariable control systems; planarisation; pressure control; robust control; three-term control; CMP pressure control; bang-bang controller; chemical mechanical polishing; dual mode gain variable PID controller; dynamic response; overshooting; polishing quality; wafer global planarization technology; Bang-bang control; Chemicals; Laboratories; Missiles; Pressure control; Projectiles; Rockets; Bang-Bang Control; CMP; Dual-modes Control; Gain-variable PID Control;
fLanguage
English
Publisher
ieee
Conference_Titel
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location
Hohhot
Print_ISBN
978-1-4244-9436-1
Type
conf
DOI
10.1109/MACE.2011.5988501
Filename
5988501
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