• DocumentCode
    2820522
  • Title

    CMP pressure control based on dual-modes controller

  • Author

    Men, Yanwu ; Zhang, Hui ; Zhou, Kai ; Ye, Peiqing ; Lu, Xinchun

  • Author_Institution
    State Key Lab. of Tribology, Tsinghua Univ., Beijing, China
  • fYear
    2011
  • fDate
    15-17 July 2011
  • Firstpage
    6378
  • Lastpage
    6382
  • Abstract
    Chemical Mechanical Polishing (CMP) is the most effective wafer global planarization technology. The quality of polishing not only depends on slurry, but also depends on the precise control of polishing pressure. This paper presents a bang-bang+ dual-modes gain-variable PID controller which is used as the core control strategy to overcome the phenomena of long adjustment time, large overshooting and so on. The strategy has the advantages of the robustness, fast dynamic response of the bang-bang controller and the high steady-state accuracy of the gain-variable PID controller. Experiment results show that the dual-modes controller is feasible, practical and correct.
  • Keywords
    bang-bang control; chemical mechanical polishing; dynamic response; multivariable control systems; planarisation; pressure control; robust control; three-term control; CMP pressure control; bang-bang controller; chemical mechanical polishing; dual mode gain variable PID controller; dynamic response; overshooting; polishing quality; wafer global planarization technology; Bang-bang control; Chemicals; Laboratories; Missiles; Pressure control; Projectiles; Rockets; Bang-Bang Control; CMP; Dual-modes Control; Gain-variable PID Control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
  • Conference_Location
    Hohhot
  • Print_ISBN
    978-1-4244-9436-1
  • Type

    conf

  • DOI
    10.1109/MACE.2011.5988501
  • Filename
    5988501