Title :
AlGaN/GaN HFET Models and the Prospects for Physics-Based Compact Models
Abstract :
Field-Effect Transistor models have been developed using both equivalent circuit based and physical modeling techniques. The equivalent circuit models have been extensively developed and are in common use. The physics-based models have lagged in development, but are now emerging as viable alternatives as compact models. The various FET and HFET modeling approaches are discussed.
Keywords :
equivalent circuits; high electron mobility transistors; semiconductor device models; AlGaN-GaN; AlGaN/GaN HFET models; HFET modeling; equivalent circuit; field-effect transistor models; physical modeling; physics-based compact models; Aluminum gallium nitride; Equivalent circuits; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Mathematical model;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619694
