Aspects of selective area epitaxy and their application to integrated optics

Author

Roberts, D.A. ; Roberts, J.S. ; Button, C.C. ; Pate, M.A. ; Hill, G. ; Claxton, P.A. ; Robson, P.N.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1989

fDate

32665

Firstpage

42552

Lastpage

42557

Abstract

The authors have assessed the viability of selective area epitaxy by applying the technique to the fabrication of low loss waveguides and optical modulator structures. Demonstrators have been fabricated by both atmospheric pressure MOCVD and solid source MBE on substrates structured by either wet chemical etching or reactive ion etching (RIE)

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; etching; gallium arsenide; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; optical waveguides; optical workshop techniques; semiconductor growth; GaAs-AlGaAs; MQW p-i-n diodes; atmospheric pressure MOCVD; channel waveguides; integrated optics; integrated optoelectronics; low loss waveguides; metallorganic chemical vapour deposition; optical modulator structures; reactive ion etching; rib waveguides; selective area epitaxy; semiconductor; solid source MBE; substrates; wet chemical etching;

fLanguage

English

Publisher

iet

Conference_Titel

Integrated Optics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

198603

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=282061