DocumentCode
282062
Title
Stripe optical waveguides in MQW structures fabricated by impurity induced layer disordering
Author
Wismayer, A.C. ; Weiss, B.L. ; Roberts, J.S.
Author_Institution
Dept. of Electron. & Electr. Eng., Surrey Univ., UK
fYear
1989
fDate
32665
Firstpage
42583
Lastpage
42586
Abstract
Results are presented on the impurity induced layer disordering by Si implantation of GaAs/GaAlAs MQW structures studied using photoluminescence and the optical waveguiding properties of samples where selective area processing was used to fabricate buried stripe waveguides
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; ion implantation; optical waveguides; optical workshop techniques; photoluminescence; semiconductor quantum wells; silicon; GaAs-GaAlAs:Si; MQW structures; Si ion implantation; buried stripe waveguides; impurity induced layer disordering; integrated optics; multi-quantum well structures; optical waveguiding properties; photoluminescence; selective area processing; semiconductor;
fLanguage
English
Publisher
iet
Conference_Titel
Integrated Optics, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198604
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