Low residual absorption MQW optical waveguides produced by boron and fluorine impurity induced disordering

Author

O´Neill, Maire ; Marsh, J.H. ; De La Rue, R.M. ; Roberts, J.S. ; Gwilliam, R.

Author_Institution

Dept. of Electron. & Electr. Eng., The Univ., Glasgow, UK

fYear

1989

fDate

32665

Firstpage

42614

Lastpage

42617

Abstract

The authors report results for neutral impurity IID in GaAs-AlGaAs multiple quantum well (MQW) layers, where the particular impurities investigated were boron and fluorine introduced using ion-implantation. Bandgap increases of up to 100 meV were observed, while, because the impurities are neutral dopants, waveguides formed in the disordered MQW exhibited only small increases in the near bandgap absorption coefficient (≈6 dB cm^-1). These results imply that IID is a practical technique for forming interconnecting waveguides in OEICs

Keywords

III-V semiconductors; aluminium compounds; boron; fluorine; gallium arsenide; integrated optics; ion implantation; optical waveguides; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs:B; GaAs-AlGaAs:F; MQW optical waveguides; impurity induced disordering; integrated optics; integrated opto-electronic circuits; interconnecting waveguides; ion-implantation; low residual absorption waveguides; multiple quantum wells; near bandgap absorption coefficient; neutral impurity IID; photoluminescence; semiconductor;

fLanguage

English

Publisher

iet

Conference_Titel

Integrated Optics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

198605