Title :
SEU Testing of SiGe Bipolar and BiCMOS Circuits
Author :
Hansen, David L. ; Le, Anthony ; Chesnut, Kay ; Miller, Eric ; Pong, Steven ; Sung, Sichul ; Truong, John
Author_Institution :
Boeing Space & Intell. Syst., Los Angeles, CA, USA
Abstract :
Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; dividing circuits; logic design; logic testing; BiCMOS circuits; SEU testing; SiGe; bipolar circuits; divider circuits; heavy ions; phase-shift upsets; single-event effects; single-event latchups; triple-mode-redundant design; BiCMOS integrated circuits; Bit error rate; CMOS integrated circuits; Clocks; Radiation effects; Silicon germanium; Tunneling magnetoresistance;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619701
