• DocumentCode
    2820974
  • Title

    A DC-isolated fine-controlled neural stimulator

  • Author

    Liu, Xiao ; Demosthenous, Andreas ; Donaldson, Nick

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    338
  • Lastpage
    341
  • Abstract
    This paper presents a neural stimulator ASIC suitable for tripolar FES stimulation which usually requires large stimulus current in fine resolution. An 8-bit current generator circuit with better linearity (output vs. input) across the whole input range and with small silicon area requirement is presented. Thanks to the high-frequency current-switching (HFCS) technique, the small on-chip blocking capacitors isolate the stimulating electrodes and neural tissue from dangerous direct voltages, such as the power supplies. The design of the HFCS stage requires careful consideration and optimized layout pattern in order to minimize current leakage to the substrate. In our design, an operational transconductance amplifier is used as a buffer to track the voltage on the blocking capacitor, reducing the current loss to less than 4% for the targeted applications. The current loss could be further minimized by using a more advanced technology with higher capacitance density and smaller parasitic capacitors. The ASIC was implemented in a 0.6-μm silicon-on-insulator CMOS process, operates from a single 12V power supply, and occupies an area of 4mm2.
  • Keywords
    CMOS analogue integrated circuits; application specific integrated circuits; capacitance; capacitors; leakage currents; neural chips; neuromuscular stimulation; operational amplifiers; silicon-on-insulator; ASIC; DC-isolated fine-controlled neural stimulator; HFCS technique; capacitance density; current generator circuit; current leakage; current loss; direct voltage; electrode; functional electrical stimulation; high-frequency current-switching; neural tissue; operational transconductance amplifier; parasitic capacitor; power supply; silicon-on-insulator CMOS process; size 0.6 mum; small on-chip blocking capacitor; tripolar FES stimulation; voltage 12 V; Application specific integrated circuits; Books; Capacitors; Electrodes; Generators; Linearity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2010 Proceedings of the
  • Conference_Location
    Seville
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-6662-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2010.5619712
  • Filename
    5619712