Analysis of current flow in mono-crystalline electrical linewidth structures

Author

Smith, S. ; Lindsay, I.A.B. ; Walton, A.J. ; Cresswell, M.W. ; Linholm, L.W. ; Allen, A. ; Fallon, M. ; Gundlach, A.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK

fYear

1999

fDate

1999

Firstpage

7

Lastpage

12

Abstract

The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on ⟨110⟩ Greek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process

Keywords

circuit simulation; doping profiles; electric current; electric resistance; electrodes; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit modelling; measurement standards; silicon; surface charging; Si; Si⟨110⟩ Greek cross structures; current flow; current flow analysis; degenerate Si doping; fabrication process; gate electrode; lightly doped mono-crystalline silicon structures; linewidth test structure measurements; monocrystalline electrical linewidth structures; secondary reference linewidth standards; sheet resistance; surface charge; Charge measurement; Costs; Current measurement; Doping; Electrical resistance measurement; Electrodes; Fabrication; Silicon; Surface resistance; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766207

Filename

766207