Title :
Analysis of current flow in mono-crystalline electrical linewidth structures
Author :
Smith, S. ; Lindsay, I.A.B. ; Walton, A.J. ; Cresswell, M.W. ; Linholm, L.W. ; Allen, A. ; Fallon, M. ; Gundlach, A.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
Abstract :
The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on ⟨110⟩ Greek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process
Keywords :
circuit simulation; doping profiles; electric current; electric resistance; electrodes; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit modelling; measurement standards; silicon; surface charging; Si; Si⟨110⟩ Greek cross structures; current flow; current flow analysis; degenerate Si doping; fabrication process; gate electrode; lightly doped mono-crystalline silicon structures; linewidth test structure measurements; monocrystalline electrical linewidth structures; secondary reference linewidth standards; sheet resistance; surface charge; Charge measurement; Costs; Current measurement; Doping; Electrical resistance measurement; Electrodes; Fabrication; Silicon; Surface resistance; Testing;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766207
