Title :
SEB occurrence in a VIP: influence of the epi-substrate junction
Author :
Lorfèvre, Eric ; Sudre, Christophe ; Dachs, Charles ; Detcheverry, Cèline ; Palau, Jean-Marie ; Gasio, Jean ; Calvet, Marie-Catherine ; Garnier, Jerome ; Ecoffet, Robert
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence
Keywords :
ion beam effects; power MOSFET; semiconductor epitaxial layers; 2D simulation; SEB; VIP; epi-substrate junction; heavy ion irradiation; single event burnout; vertical intelligent power; Argon; Circuit testing; Ion accelerators; MOS devices; MOSFET circuits; Nuclear physics; Performance evaluation; Power MOSFET; Power supplies; Vehicles;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.699000
