• DocumentCode
    2821254
  • Title

    SEB occurrence in a VIP: influence of the epi-substrate junction

  • Author

    Lorfèvre, Eric ; Sudre, Christophe ; Dachs, Charles ; Detcheverry, Cèline ; Palau, Jean-Marie ; Gasio, Jean ; Calvet, Marie-Catherine ; Garnier, Jerome ; Ecoffet, Robert

  • Author_Institution
    Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    557
  • Lastpage
    560
  • Abstract
    Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence
  • Keywords
    ion beam effects; power MOSFET; semiconductor epitaxial layers; 2D simulation; SEB; VIP; epi-substrate junction; heavy ion irradiation; single event burnout; vertical intelligent power; Argon; Circuit testing; Ion accelerators; MOS devices; MOSFET circuits; Nuclear physics; Performance evaluation; Power MOSFET; Power supplies; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.699000
  • Filename
    699000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2821254