Fe doping and preparation of semi insulating InP by wafer annealing under Fe phosphide vapor pressure

Author

Uchida, M. ; Asahi, T. ; Kainosho, K. ; Matsuda, Y. ; Oda, O.

Author_Institution

Mater. & Components Labs., Japan Energy Corp., Saitama, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

377

Lastpage

380

Abstract

Semi-insulating (SI) InP has been industrially produced by doping Fe atoms as deep acceptors. Fe concentrations in InP are, however, largely varied from top to tail along the crystal growth axis because of impurity segregation. In the present work, we have examined the possibility of vapor phase doping for producing 50 mm diameter SI InP wafers with constant Fe concentrations by using a wafer annealing procedure. Small amount of Fe was charged with red phosphorus in ampoules in which InP wafers were annealed. It was found that the vapor phase doping is effective for Fe doping in InP. The present technology can be applied for the production of low Fe doped SI InP wafers with the same Fe concentration for all wafers from one InP ingot

Keywords

III-V semiconductors; annealing; doping profiles; impurity distribution; indium compounds; iron; segregation; semiconductor doping; 50 mm; Fe doping; InP:Fe; deep acceptors; impurity segregation; vapor phase doping; wafer annealing; wafer annealing procedure; Annealing; Crystalline materials; Crystals; Doping; Impurities; Indium phosphide; Iron; Optical materials; Powders; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712481

Filename

712481