Impact of bias, doping and High-K dielectric on RF stability performance of junctionless tri-gate transistor

Author

Vyas, Lochan ; Akshay, Deshpande ; Sharma, Sanidhya Mohan ; Sivasankaran, K. ; Kannadassan, D. ; Mallick, P.S.

Author_Institution

Sch. of Electron. Eng., VIT Univ., Vellore, India

fYear

2015

fDate

26-27 Feb. 2015

Firstpage

1377

Lastpage

1380

Abstract

This paper presents the effect of process parameter variation such as oxide material, oxide thickness, doping concentration along with bias conditions and different high-k dielectric on RF stability performance of Junctionless Tri-Gate Transistor (JLTGT). The small signal RF parameter is obtained from extracted device parameters using TCAD (Technology Computer Aided Design). The results show that optimized JLTGT shows good RF stability performance.

Keywords

UHF field effect transistors; doping profiles; high-k dielectric thin films; microwave field effect transistors; semiconductor device reliability; RF stability performance; bias conditions; doping concentration; high-K dielectric effect; junctionless trigate transistor; oxide material; oxide thickness; process variation; Circuit stability; Doping; Logic gates; Performance evaluation; Radio frequency; Stability analysis; Transistors; Junctionless Tri-Gate Transistor (JLTGT); Numerical Simulation; Radio Frequency (RF); stability factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Communication Systems (ICECS), 2015 2nd International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-7224-1

Type

conf

DOI

10.1109/ECS.2015.7124810

Filename

7124810