Title :
Substrate resistance effect on the Fmax parameter of isolated BJT in BiCMOS process
Author :
Gloria, D. ; Perrotin, A. ; Carbonéro, J.L. ; Morin, G.
Author_Institution :
Central R&D, ST Microelectron., Crolles, France
Abstract :
High frequency test structures for bipolar devices with several guard ring configurations are described. Using these structures, the substrate effect on merit figures such as Ft and Fmax has been studied experimentally and compared to Microwave Design System (MDS) electrical simulations. A worst case for guard ring position is proposed, providing up to 15 GHz Fmax degradation
Keywords :
BiCMOS integrated circuits; MMIC; bipolar transistors; circuit simulation; integrated circuit reliability; integrated circuit testing; BiCMOS process; Fmax parameter; Ft parameter; Microwave Design System electrical simulations; bipolar devices; guard ring configurations; guard ring position; high frequency test structures; isolated BJT; merit figures; substrate effect; substrate resistance effect; BiCMOS integrated circuits; Capacitance; Degradation; Frequency; Microelectronics; Microwave devices; Research and development; Scattering parameters; Silicon; Testing;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766210
