A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors

Author

Sanden, Martin ; Zhang, Shi-Li ; Grahn, Jan V. ; Östling, Mikael

Author_Institution

Dept. of Electron., KTH, Kista, Sweden

fYear

1999

fDate

1999

Firstpage

30

Lastpage

33

Abstract

Direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJTs) was performed using a new test structure. The test structure was basically identical to a real BJT, but without the intrinsic base. Hence, the extrinsic parasitics of the test structure were identical to the BJT. From the test structure small-signal model, all extrinsic model parameters were directly extracted from the measured scattering parameters over the frequency range of 1 to 18 GHz. The values of the extracted parameters were in good agreement compared to those obtained using other conventional methods

Keywords

SPICE; elemental semiconductors; microwave bipolar transistors; semiconductor device models; semiconductor device testing; silicon; 1 to 18 GHz; BJTs; SPICE model parameters; Si; direct SPICE model parameter extraction; double polysilicon bipolar junction transistors; double polysilicon bipolar transistors; extrinsic model parameters; extrinsic parasitics; intrinsic base; scattering parameters; test structure; test structure small-signal model; Circuit testing; Conductivity; Contact resistance; Equivalent circuits; Parameter extraction; Performance analysis; Performance evaluation; Predictive models; SPICE; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766211

Filename

766211