Title :
The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs
Author :
Deen, M. Jamal ; Chen, Chih-Hung
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NFmin, equivalent noise resistance Rn, and optimized source reflection coefficient Γopt) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared
Keywords :
MOSFET; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; MOSFETs; equivalent noise resistance; high-frequency noise modeling; minimum noise figure; n-MOSFETs; noise parameter de-embedding; noise parameters; optimized source reflection coefficient; parasitic pad effects; physically-based pad model; Bonding; Electric resistance; Electrical resistance measurement; Equivalent circuits; Impedance; MOSFET circuits; Microwave measurements; Noise figure; Noise measurement; Probes;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766212
