DocumentCode
2821339
Title
A 0.13µm CMOS 0.1–20MHz bandwidth 86–70dB DR multi-mode DT ΔΣ ADC for IMT-Advanced
Author
Christen, Thomas ; Huang, Qiuting
Author_Institution
Adv. Circuit Pursuit (ACP) AG, Zollikon, Switzerland
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
414
Lastpage
417
Abstract
This paper presents a reconfigurable tri-level/multi-bit multi-mode ΔΣ modulator implemented in 0.13 μm CMOS. The modulator covers between 0.1 MHz and 20 MHz signal bandwidth which makes it suitable for cellular applications including 4G radio systems, also known as IMT-Advanced. With a maximum sampling rate of 400 MHz, the modulator achieves between 86 dB and 70 dB DR for 100 kHz and 20 MHz signal bandwidth, respectively, at a scalable power consumption between 2 mW and 34 mW from a 1.2 V supply, including the reference buffer.
Keywords
CMOS integrated circuits; analogue-digital conversion; cellular radio; delta-sigma modulation; 4G radio systems; CMOS technoloyy; IMT-Advanced; bandwidth 0.1 MHz to 20 MHz; cellular applications; frequency 400 MHz; multi-mode DT ΔΣ ADC; power 2 mW; power 34 mW; reconfigurable tri-level/multi-bit multi-mode ΔΣ modulator; size 0.13 mum; voltage 1.2 V; 3G mobile communication; Bandwidth; CMOS integrated circuits; GSM; Modulation; Noise; Power demand;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC, 2010 Proceedings of the
Conference_Location
Seville
ISSN
1930-8833
Print_ISBN
978-1-4244-6662-7
Type
conf
DOI
10.1109/ESSCIRC.2010.5619731
Filename
5619731
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