Title :
A 0.13µm CMOS 0.1–20MHz bandwidth 86–70dB DR multi-mode DT ΔΣ ADC for IMT-Advanced
Author :
Christen, Thomas ; Huang, Qiuting
Author_Institution :
Adv. Circuit Pursuit (ACP) AG, Zollikon, Switzerland
Abstract :
This paper presents a reconfigurable tri-level/multi-bit multi-mode ΔΣ modulator implemented in 0.13 μm CMOS. The modulator covers between 0.1 MHz and 20 MHz signal bandwidth which makes it suitable for cellular applications including 4G radio systems, also known as IMT-Advanced. With a maximum sampling rate of 400 MHz, the modulator achieves between 86 dB and 70 dB DR for 100 kHz and 20 MHz signal bandwidth, respectively, at a scalable power consumption between 2 mW and 34 mW from a 1.2 V supply, including the reference buffer.
Keywords :
CMOS integrated circuits; analogue-digital conversion; cellular radio; delta-sigma modulation; 4G radio systems; CMOS technoloyy; IMT-Advanced; bandwidth 0.1 MHz to 20 MHz; cellular applications; frequency 400 MHz; multi-mode DT ΔΣ ADC; power 2 mW; power 34 mW; reconfigurable tri-level/multi-bit multi-mode ΔΣ modulator; size 0.13 mum; voltage 1.2 V; 3G mobile communication; Bandwidth; CMOS integrated circuits; GSM; Modulation; Noise; Power demand;
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
Print_ISBN :
978-1-4244-6662-7
DOI :
10.1109/ESSCIRC.2010.5619731