DocumentCode :
2821466
Title :
A special test structure for the measurement of the injection dependent series resistance of power diodes
Author :
Bellone, Salvatore ; Daliento, Santolo ; Sanseverino, Annuniziata
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Salerno Univ., Italy
fYear :
1999
fDate :
1999
Firstpage :
80
Lastpage :
83
Abstract :
In this paper, the capability of a new test pattern for extraction of both the intrinsic series resistance and the injection level of power diodes is presented. The method is based on the measurement of the DC voltage manifesting at a sensing region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally, experimental results obtained on fabricated diodes are presented
Keywords :
electric resistance; power semiconductor diodes; semiconductor device models; semiconductor device testing; 2D simulations; active device; injection dependent series resistance; injection level; intrinsic series resistance; power diodes; sensing region DC voltage measurement; test pattern; test structure; Contact resistance; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electronic equipment testing; Immune system; Power measurement; Surface resistance; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
Type :
conf
DOI :
10.1109/ICMTS.1999.766220
Filename :
766220
Link To Document :
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