A special test structure for the measurement of the injection dependent series resistance of power diodes

Author

Bellone, Salvatore ; Daliento, Santolo ; Sanseverino, Annuniziata

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Salerno Univ., Italy

fYear

1999

fDate

1999

Firstpage

80

Lastpage

83

Abstract

In this paper, the capability of a new test pattern for extraction of both the intrinsic series resistance and the injection level of power diodes is presented. The method is based on the measurement of the DC voltage manifesting at a sensing region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally, experimental results obtained on fabricated diodes are presented

Keywords

electric resistance; power semiconductor diodes; semiconductor device models; semiconductor device testing; 2D simulations; active device; injection dependent series resistance; injection level; intrinsic series resistance; power diodes; sensing region DC voltage measurement; test pattern; test structure; Contact resistance; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electronic equipment testing; Immune system; Power measurement; Surface resistance; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766220

Filename

766220