Title :
Identification of MOS oxide defect location with a spatial resolution less than 0.1 μm using photoemission microscope
Author :
Ohzone, Takashi ; Yuzaki, Masae ; Matsuda, Toshihiro ; Kameda, Etsumasa
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
Abstract :
The maximum photoemission position corresponding to an oxide defect was determined with a spatial resolution of less than 0.1 μm by a combination of an improved photoemission microscope with a magnification of 500× and a MOS capacitor test structure which had a periodic X-Y matrix pattern to define the precise oxide-defect location. The field-oxide islands, which had photoemission spots from the oxide defects, were distributed at random. The LOCOS edge corresponding to the intensity dent of the reflected light image was located at about +0.3 μm from the gate-oxide edge. The oxide defects were located in a range from +0.4~-0.1 μm from the LOCOS edge
Keywords :
MOS capacitors; MOS integrated circuits; dielectric thin films; fault location; integrated circuit reliability; integrated circuit testing; oxidation; photoelectron spectra; photoemission; 0.1 micron; 0.3 micron; 0.4 micron; LOCOS edge; MOS capacitor test structure; MOS oxide defect location; SiO2-Si; field-oxide islands; gate-oxide edge; maximum photoemission position; microscope magnification; oxide defect; oxide defects; oxide-defect location; periodic X-Y matrix pattern; photoemission microscope; photoemission microscopy; photoemission spots; reflected light image intensity dent; spatial resolution; Atomic force microscopy; Current measurement; Leak detection; Leakage current; Optical films; Optical sensors; Photoelectricity; Scanning electron microscopy; Spatial resolution; Transmission electron microscopy;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766222
