A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs

Author

Lee, Seonghearn ; Yu, Hyun Kyu

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-do, South Korea

fYear

1999

fDate

1999

Firstpage

95

Lastpage

98

Abstract

A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out using S-parameter sets measured under specific bias conditions for various device sizes. The resistances (R_g, R_d) and inductances are obtained by fitting the frequency responses of Z-parameter equations, and source and substrate resistances are determined using S-parameter optimization. Good correspondence is observed between measured and modeled S-parameters up to 12 GHz

Keywords

MOSFET; S-parameters; SPICE; capacitance; curve fitting; electric resistance; frequency response; inductance; microwave field effect transistors; optimisation; semiconductor device measurement; semiconductor device models; 12 GHz; BSIM3v3 model parameter extraction; RF MOSFET; RF silicon MOSFETs; S-parameter data; S-parameter optimization; S-parameter sets; SPICE BSIM3v3 model; Z-parameter equations; bias conditions; capacitance parameters; device size; drain resistance; frequency response fitting; gate resistance; inductance; measured S-parameters; modeled S-parameters; parameter extraction technique; source resistance; substrate resistance; Capacitance measurement; Data mining; Electrical resistance measurement; MOSFET circuits; Parameter extraction; Radio frequency; SPICE; Scattering parameters; Silicon; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766223

Filename

766223