Title :
Test structure design for a fast and simple evaluation of carrier mobilities in highly injected regions
Author_Institution :
Facolta di Ingegneria, Univ. del Sannio, Benevento, Italy
Abstract :
This paper describes the use and the design of a microelectronic test structure to show a new fast and simple DC method for measuring the dependence of carrier mobilities upon carrier concentration. The test structure is designed for reducing parasitic effects and providing reliable results up to the highest carrier concentrations. Numerical simulation is used for verification of the accuracy of the method for several test structure parameters. Experimental results are provided and represented by a simple fitting formula
Keywords :
carrier density; carrier mobility; curve fitting; integrated circuit design; integrated circuit modelling; integrated circuit testing; numerical analysis; DC measurement method; IC test structure design; carrier concentration; carrier mobility; fitting formula; highly injected regions; microelectronic test structure; microelectronic test structure design; numerical simulation; parasitic effects; test structure parameters; Charge carrier processes; Current density; Diodes; Doping; Fitting; Microelectronics; Numerical simulation; Scattering; Substrates; Testing;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766224
