On-wafer calibration techniques for giga-hertz CMOS measurements

Author

Kolding, Troels Emil

Author_Institution

RF Integrated Syst. & Circuits Group, Aalborg Univ., Denmark

fYear

1999

fDate

1999

Firstpage

105

Lastpage

110

Abstract

This paper presents five different methods for performing on-wafer calibration of RF CMOS measurements. All methods are compatible with standard CMOS technology. A comparison of method performance up to 12 GHz is made with measurements on RF CMOS devices. The results verify that substrate and metallization losses must be considered to obtain high accuracy. Fixture design issues are discussed and a method for mitigating overestimation of DUT performance is suggested

Keywords

CMOS integrated circuits; calibration; field effect MMIC; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; losses; 12 GHz; CMOS measurements; CMOS technology; DUT performance overestimation; RF CMOS device measurements; RF CMOS measurements; fixture design issues; measurement method performance; metallization losses; on-wafer calibration; on-wafer calibration techniques; substrate losses; CMOS process; CMOS technology; Calibration; Fixtures; Integrated circuit measurements; Microwave devices; Performance evaluation; Radio frequency; Semiconductor device modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766225

Filename

766225