DocumentCode
2821639
Title
Analysis of the photoreflectance spectra of GaInAsP/GaInAsP multi-quantum well structures
Author
Glew, R.W. ; Gray, M.L. ; Hybertsen, M.S. ; Grim-Bogdan, K.A. ; Tzafaras, N.N.
Author_Institution
Lucent Technol., AT&T Bell Labs., Breinigsville, PA, USA
fYear
1998
fDate
11-15 May 1998
Firstpage
385
Lastpage
388
Abstract
In the analysis of the photoreflectance spectra of GaInAsP/GaInAsP mqw structures a transition from the barrier has been observed. Structures with different compositions, thicknesses and strains of barrier all exhibited a barrier transition at an energy close to the expected barrier energy. This is the first time that that the energy of a barrier in an mqw has been observed
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; photoreflectance; semiconductor quantum wells; semiconductor superlattices; GaInAsP-GaInAsP; GaInAsP/GaInAsP mqw structures; GaInAsP/GaInAsP multi-quantum well structures; barrier transition; composition; photoreflectance spectra; strains; thickness; Capacitive sensors; Energy states; Indium phosphide; Laser excitation; Monitoring; Quantum well devices; Quantum well lasers; Semiconductor lasers; X-ray lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712483
Filename
712483
Link To Document