Title :
Geometry modeling method for narrow/short and narrow MOSFETs
Author :
Sekine, Satoshi ; Sugiyama, Motoyasu ; Saito, Naomi
Author_Institution :
Comput. Technol. Lab., Motorola Japan Ltd., Miyagi, Japan
Abstract :
In this paper, we present a new physics-based model for narrow width MOSFETs that accounts for the LOCOS narrow width effect and the webbing effect. The model is based on physical geometry changes of MOSFETs that are caused by the changes in field edge shape during LOCOS isolation and consecutive oxide etch, and the webbing effect of lithography for the dog-bone layout. It allows the use of a single set of parameters for any combination of MOSFET widths and lengths without geometry binning. We also discuss details of the test structures and the modeling procedure, and model implementation in SPICE simulation
Keywords :
MOSFET; SPICE; dielectric thin films; etching; isolation technology; lithography; oxidation; semiconductor device models; semiconductor device testing; LOCOS isolation; LOCOS narrow width effect; MOSFET length; MOSFET physical geometry changes; MOSFET width; SPICE model implementation; SPICE simulation; SiO2-Si; dog-bone layout; field edge shape; geometry binning; geometry modeling method; lithography; modeling procedure; narrow channel MOSFETs; narrow width MOSFETs; narrow/short MOSFETs; oxide etch; physics-based model; test structures; webbing effect; Etching; Geometry; Laboratories; Lithography; MOSFETs; Oxidation; Physics computing; SPICE; Shape; Solid modeling;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766229
