3D characterization of RF power transistors

Author

Arnborg, Torkel ; Johansson, Ted

Author_Institution

Ericsson Components AB, Kista, Sweden

fYear

1999

fDate

1999

Firstpage

131

Lastpage

134

Abstract

3D electromagnetic simulations and SPICE were used to model the influence of wire geometry, internal matching networks and package on the characteristics of high-power RF transistors for cellular base stations. A method for extracting the actual internal 3D geometries by applying SEM micrographs and Java software was developed. Measured transistor data was correlated with simulated data, and the importance of the contributing elements and the mutual coupling of the bond wires was demonstrated

Keywords

Java; SPICE; cellular radio; lead bonding; microwave power transistors; scanning electron microscopy; semiconductor device models; semiconductor device packaging; telecommunication equipment; 3D characterization; 3D electromagnetic simulations; Java software; RF power transistors; SEM micrographs; SPICE; internal 3D geometries; internal matching networks; mutual bond wire coupling; package effects; power RF transistor model; power RF transistor package; power RF transistors; simulated data; transistor data; wire geometry effects; Base stations; Cellular networks; Electromagnetic modeling; Geometry; Packaging; Power transistors; Radio frequency; SPICE; Solid modeling; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766230

Filename

766230