• DocumentCode
    2821700
  • Title

    A simple physical extraction method for RD-RS of asymmetric MOSFETs

  • Author

    Blaum, Alfred ; Victory, James ; McAndrew, Colin C.

  • Author_Institution
    Adv. Circuit Res. Lab.-Eur., Motorola Inc., Le Grand-Saconnex, Switzerland
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    141
  • Lastpage
    146
  • Abstract
    MOSFETs with different drain and source series resistance, RD and RS, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of RD-R S. This paper presents the concept and the results of a new, simple, and physical extraction technique to determine RD-R S purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling
  • Keywords
    MOSFET; electric resistance; power MOSFET; semiconductor device measurement; semiconductor device models; MOSFET drain current modeling; MOSFETs; asymmetric MOSFETs; drain series resistance; drain-source series resistance difference; modeling; physical extraction method; physical extraction technique; power technology; source series resistance; CMOS technology; Circuits; Conductivity; Data mining; Electrical resistance measurement; Hot carriers; MOS devices; MOSFETs; Medium voltage; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
  • Conference_Location
    Goteborg
  • Print_ISBN
    0-7803-5270-X
  • Type

    conf

  • DOI
    10.1109/ICMTS.1999.766232
  • Filename
    766232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2821700