Title :
A new procedure for extraction of series resistances for bipolar transistors from DC measurements
Author :
Linder, M. ; Ingvarson, F. ; Jeppson, K.O. ; Grahn, J.V. ; Zhang, S.L. ; Östling, M.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
A new procedure for direct extraction of the base and emitter resistances is presented. The parameters are extracted from a single measurement on a transistor test structure with two separated base contacts. The proposed extraction procedure was successfully applied to transistors fabricated in a double polysilicon bipolar transistor process and a commercial 0.8 μm single polysilicon BiCMOS process. The extracted values show good agreement with those obtained by means of high frequency measurements. Furthermore, the method was verified by simulations and extraction from modelled data using a distributed resistor-diode transistor model. Both emitter current crowding effects and conductivity modulation in the base are considered in the model. The comparison between measured and modelled transistor characteristics using the extracted values as input in the Gummel-Poon model also validates the DC extraction method. The method was found to be valid as long as conductivity modulation in the base is dominant over emitter current crowding effects as a cause for the decrease in the base resistance
Keywords :
BiCMOS integrated circuits; bipolar transistors; electric current; electric resistance measurement; electrical conductivity; semiconductor device measurement; semiconductor device models; 0.8 micron; DC extraction method; DC measurements; Gummel-Poon model; Si; base conductivity modulation; base resistance; bipolar transistors; direct base resistance extraction; direct emitter resistance extraction; distributed resistor-diode transistor model; double polysilicon bipolar transistor process; emitter current crowding effects; extraction procedure; high frequency measurements; measured transistor characteristics; modelled transistor characteristics; parameter measurement; separated base contacts; series resistance extraction procedure; simulations; single polysilicon BiCMOS process; transistor test structure; Bipolar transistors; Conductivity; Data mining; Electrical resistance measurement; Frequency measurement; Hafnium; Laboratories; Proximity effect; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766233
