• DocumentCode
    2821856
  • Title

    Test structure for measurement of ion stopping power

  • Author

    Kanata, H. ; Tosaka, Y. ; Ehara, H. ; Satoh, S.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He2+ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula
  • Keywords
    cosmic ray interactions; error analysis; integrated circuit measurement; integrated circuit testing; neutron effects; semiconductor diodes; silicon-on-insulator; He; He2+ ions; SOI structure; Si device soft errors; Si ion stopping power; Si-SiO2; Ziegler formula; diode test structure; ion stopping power; ion stopping power measurement; secondary cosmic-ray neutrons; soft errors; test structure; Atomic measurements; Current measurement; Diodes; Energy loss; Energy measurement; Insulation; Loss measurement; Power measurement; Testing; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
  • Conference_Location
    Goteborg
  • Print_ISBN
    0-7803-5270-X
  • Type

    conf

  • DOI
    10.1109/ICMTS.1999.766240
  • Filename
    766240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2821856