Title :
Contribution to the characterization of the hump effect in MOSFET submicronic technologies
Author :
Brut, H. ; Velghe, R.M.D.A.
Author_Institution :
STMicroelectron., Crolles Centre Commun, France
Abstract :
A new method allowing the automatic characterization of the subthreshold hump effect (Sallagoity et al., IEEE TED vol. 43, no. 11, pp. 1900-6, 1996) is presented in this paper. It makes use of a variable transformation based on observations made with a hump model. This model considers two sub-transistors with different threshold voltages in parallel. The extracted parameters are the hump effect magnitude, the weak inversion slope and the extrapolated leakage current at Vg =0 V. After implementation in our automatic test system, the routine has been successfully applied to the 0.25 μm technology of the Crolles Centre Commun. The efficiency and reliability of this routine are demonstrated whatever the operating bias and temperature. It is noticed that this method is a useful tool to monitor and study the hump effect
Keywords :
MOSFET; automatic test equipment; extrapolation; leakage currents; semiconductor device models; semiconductor device reliability; semiconductor device testing; 0.25 micron; MOSFET; automatic characterization; automatic test system; extrapolated leakage current; hump effect; hump effect magnitude; hump model; operating bias; operating temperature; reliability; sub-transistor threshold voltages; subthreshold hump effect; test efficiency; variable transformation; weak inversion slope; Automatic testing; Isolation technology; Leakage current; MOSFET circuits; Monitoring; Ocean temperature; Parasitic capacitance; Research and development; System testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766241
