DocumentCode :
2821878
Title :
Inclusion of substrate effects in the flyback method for BJT resistance characterisation
Author :
MacSweeney, Dermot ; McCarthy, Kevin ; Mathewson, Alan ; Power, J.A. ; Kelly, S.C.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fYear :
1999
fDate :
1999
Firstpage :
194
Lastpage :
199
Abstract :
In this paper, the effect of the substrate interaction is examined for the RE flyback method which is commonly used to measure the emitter resistance of BJT devices. By considering the structure to be a combination of two devices, the measurement conditions can be understood better for different substrate configurations, giving improved confidence in the method
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device measurement; BJT devices; BJT resistance characterisation; RE flyback method; emitter resistance; flyback method; measurement conditions; substrate configurations; substrate effects; substrate interaction effects; Analysis of variance; BiCMOS integrated circuits; Bipolar transistors; Circuit synthesis; Educational institutions; Electrical resistance measurement; Frequency; Microelectronics; Performance gain; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
Type :
conf
DOI :
10.1109/ICMTS.1999.766242
Filename :
766242
Link To Document :
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