• DocumentCode
    2821878
  • Title

    Inclusion of substrate effects in the flyback method for BJT resistance characterisation

  • Author

    MacSweeney, Dermot ; McCarthy, Kevin ; Mathewson, Alan ; Power, J.A. ; Kelly, S.C.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    194
  • Lastpage
    199
  • Abstract
    In this paper, the effect of the substrate interaction is examined for the RE flyback method which is commonly used to measure the emitter resistance of BJT devices. By considering the structure to be a combination of two devices, the measurement conditions can be understood better for different substrate configurations, giving improved confidence in the method
  • Keywords
    bipolar transistors; electric resistance measurement; semiconductor device measurement; BJT devices; BJT resistance characterisation; RE flyback method; emitter resistance; flyback method; measurement conditions; substrate configurations; substrate effects; substrate interaction effects; Analysis of variance; BiCMOS integrated circuits; Bipolar transistors; Circuit synthesis; Educational institutions; Electrical resistance measurement; Frequency; Microelectronics; Performance gain; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
  • Conference_Location
    Goteborg
  • Print_ISBN
    0-7803-5270-X
  • Type

    conf

  • DOI
    10.1109/ICMTS.1999.766242
  • Filename
    766242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2821878