Title :
CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure
Author :
Vildeuil, J.C. ; Valenza, M. ; Rigaud, D.
Author_Institution :
Centre d´´Electron. de Micro-optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
1/f noise is investigated in a set of transistors issued from a 0.8 μm CMOS technology. Measurements have been analysed versus gate and drain biases. Noise parameters for BSIM3 simulation are extracted in all operating regions using a new extraction procedure. As expected, three noise parameters (NOIA, NOIB and NOIC) can model the noise in all operating regimes. Moreover, it is shown that for the studied transistors, the contribution of NOIC is neglible in the saturation range. Some inaccuracies of the BSIM3v3 noise model are pointed out; in particular, the experimental data indicates that for n-channel MOSFETs, the NOIB parameter is VGS-VT dependent
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; circuit simulation; integrated circuit measurement; integrated circuit noise; 1/f noise; BSIM3 simulation; BSIM3 simulation parameter extraction; BSIM3v3 noise model; CMOS 1/f noise modelling; CMOS technology; drain bias; gate bias; n-channel MOSFETs; noise model; noise parameters; operating regimes; parameter extraction procedure; 1f noise; CMOS technology; Capacitance; Data mining; Equations; MOSFETs; Noise measurement; Parameter extraction; Performance evaluation; Semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766244
