DocumentCode :
2821949
Title :
The detrimental impact of negative Celsius temperature on ultra-low-voltage CMOS logic
Author :
Bol, David ; Hocquet, Cédric ; Flandre, Denis ; Legat, Jean-Didier
Author_Institution :
ICTEAM Inst., Univ. Catholique de Louvain, Louvain, Belgium
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
522
Lastpage :
525
Abstract :
Ultra-low-voltage operation efficiently reduces energy consumption of digital circuits. However, subthreshold MOSFET behavior completely modifies the impact of process, voltage and temperature variations. This paper demonstrates that negative Celsius temperatures are highly detrimental to ultra-low-voltage logic, even more than process variations. We experimentally confirm in 65nm CMOS that -40°C operation dramatically increases the delay by 5.3× at 0.4V. Moreover, we report for the first time that negative temperature almost doubles delay sensitivity against voltage and process variations at ultra-low voltage. This worsens cycle time margins and induces dangerous timing uncertainties. Negative temperature is thus a major concern for ultra-low-voltage circuits.
Keywords :
CMOS logic circuits; MOSFET; delay circuits; low-power electronics; dangerous timing uncertainty; delay sensitivity; detrimental impact; digital circuits; energy consumption; negative celsius temperature; size 65 nm; subthreshold MOSFET behavior; temperature -40 C; ultra-low-voltage CMOS logic; ultra-low-voltage circuits; ultra-low-voltage operation; voltage 0.4 V; CMOS integrated circuits; Delay; Sensitivity; Subthreshold current; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
ISSN :
1930-8833
Print_ISBN :
978-1-4244-6662-7
Type :
conf
DOI :
10.1109/ESSCIRC.2010.5619758
Filename :
5619758
Link To Document :
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