A compact SOI model for fully-depleted and partially-depleted 0.25 μm SIMOX devices

Author

Chen, Ping ; Liu, Zhihong ; Yeh, Chune-Sin ; Zhang, Gang ; Nishimura, Kazuyoshi ; Shimaya, Masakazu ; Komatsu, Tetsuro

Author_Institution

BTA Technol. Inc., Santa Clara, CA, USA

fYear

1999

fDate

1999

Firstpage

222

Lastpage

226

Abstract

A compact SOI MOSFET model based on the Bsim3v3 bulk model with new features of effective substrate bias and transition voltage concepts to cover the transition behavior from partially-depleted to fully-depleted modes, R_out smoothing, enhanced models for impact ionization, L_eff-dependent parasitic BJT and self-heating is proposed. Results obtained from this model are in excellent agreement with the experimental I-V, C-V and propagation-delay time data

Keywords

MOSFET; SIMOX; capacitance; delays; electric current; electric resistance; impact ionisation; semiconductor device measurement; semiconductor device models; 0.25 micron; Bsim3v3 bulk model; C-V data; I-V data; SOI MOSFET model; SOI model; Si-SiO₂; effective channel length-dependent parasitic BJT; effective substrate bias; fully-depleted SIMOX devices; fully-depleted mode; impact ionization model; output resistance smoothing; partially-depleted SIMOX devices; partially-depleted mode; propagation-delay time data; self-heating; transition voltage; Circuit simulation; Equations; Impact ionization; Laboratories; MOSFET circuits; Power system modeling; Semiconductor device modeling; Smoothing methods; Video recording; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766248

Filename

766248