Title :
A compact SOI model for fully-depleted and partially-depleted 0.25 μm SIMOX devices
Author :
Chen, Ping ; Liu, Zhihong ; Yeh, Chune-Sin ; Zhang, Gang ; Nishimura, Kazuyoshi ; Shimaya, Masakazu ; Komatsu, Tetsuro
Author_Institution :
BTA Technol. Inc., Santa Clara, CA, USA
Abstract :
A compact SOI MOSFET model based on the Bsim3v3 bulk model with new features of effective substrate bias and transition voltage concepts to cover the transition behavior from partially-depleted to fully-depleted modes, Rout smoothing, enhanced models for impact ionization, Leff-dependent parasitic BJT and self-heating is proposed. Results obtained from this model are in excellent agreement with the experimental I-V, C-V and propagation-delay time data
Keywords :
MOSFET; SIMOX; capacitance; delays; electric current; electric resistance; impact ionisation; semiconductor device measurement; semiconductor device models; 0.25 micron; Bsim3v3 bulk model; C-V data; I-V data; SOI MOSFET model; SOI model; Si-SiO2; effective channel length-dependent parasitic BJT; effective substrate bias; fully-depleted SIMOX devices; fully-depleted mode; impact ionization model; output resistance smoothing; partially-depleted SIMOX devices; partially-depleted mode; propagation-delay time data; self-heating; transition voltage; Circuit simulation; Equations; Impact ionization; Laboratories; MOSFET circuits; Power system modeling; Semiconductor device modeling; Smoothing methods; Video recording; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766248
