DocumentCode :
282255
Title :
Nonlinear modelling of IMPATT diode using linear RLC elements and nonlinear controlled sources
Author :
Bassirat, F. ; Sobhy, M.I.
Author_Institution :
Marconi Instruments Ltd., Stevenage, UK
fYear :
1989
fDate :
32814
Firstpage :
42401
Lastpage :
42406
Abstract :
A new nonlinear model has been developed for IMPATT diodes using linear RLC elements and nonlinear controlled sources. It is shown that the model is capable of predicting the performance of the diode both in avalanche and non-avalanche regions, and predicting the performance of oscillators and amplifiers where this type of diode is used. An application of the model was shown by analysing an IMPATT oscillator on a CAD program. The results of the simulation and measurements are in close agreement which shows the accuracy of the model
Keywords :
IMPATT diodes; semiconductor device models; CAD program; IMPATT diode; amplifiers; avalanche region; linear RLC elements; microwave devices; nonavalanche region; nonlinear controlled sources; oscillators; simulation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
198912
Link To Document :
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