DocumentCode
282255
Title
Nonlinear modelling of IMPATT diode using linear RLC elements and nonlinear controlled sources
Author
Bassirat, F. ; Sobhy, M.I.
Author_Institution
Marconi Instruments Ltd., Stevenage, UK
fYear
1989
fDate
32814
Firstpage
42401
Lastpage
42406
Abstract
A new nonlinear model has been developed for IMPATT diodes using linear RLC elements and nonlinear controlled sources. It is shown that the model is capable of predicting the performance of the diode both in avalanche and non-avalanche regions, and predicting the performance of oscillators and amplifiers where this type of diode is used. An application of the model was shown by analysing an IMPATT oscillator on a CAD program. The results of the simulation and measurements are in close agreement which shows the accuracy of the model
Keywords
IMPATT diodes; semiconductor device models; CAD program; IMPATT diode; amplifiers; avalanche region; linear RLC elements; microwave devices; nonavalanche region; nonlinear controlled sources; oscillators; simulation;
fLanguage
English
Publisher
iet
Conference_Titel
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198912
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