Title :
Seeing through the package of a 0.3 μm GaAs MESFET
Author :
Bridge, J.P. ; Hill, A.J. ; Ladbrooke, P.H. ; Rycroft, C. H D ; Bali, S.M.
Author_Institution :
GaAs Code Ltd., St. John´´s Innovation Centre, Cambridge, UK
Abstract :
A new method for de-embedding GaAs FET or HEMT chip data from measurements made on packaged devices has been described. The method is based on physically meaningful constraints applied to chip devices, and has been verified for a commonly-used GaAs FET. The method enables better understanding of the application of packaged devices in hybrid microwave integrated circuits
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; hybrid integrated circuits; microwave integrated circuits; packaging; semiconductor device models; solid-state microwave devices; 0.3 micron; GaAs; III-IV semiconductors; MESFET; MIC; NEC71083 packaged FET; chip data de-embedding; de-embedding; hybrid microwave integrated circuits; package;
Conference_Titel :
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location :
London
