Title :
A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Author :
Morl, L. ; Bornholdt, C. ; Hoffmann, D. ; Matzen, K. ; Mekonnen, G.G. ; Reier, F.W.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
In this work high bandwidth and polarization independence were tackled by employing a travelling wave electrode and a tunnelling barrier QW (TBQW) structure, respectively, as the basic guidelines in the design of the switching element, a Mach-Zehnder interferometer (MZI). With a small variation of the waveguide network connecting the MZI either a time division demultiplexer (DEMUX) or a modulator were fabricated. The development of the DEMUX is part of the European ACTS HIGHWAY project
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; demultiplexing equipment; electro-optical modulation; electro-optical switches; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; semiconductor quantum wells; semiconductor superlattices; tunnelling; European ACTS HIGHWAY project; GaInAs-AlInAs; Mach-Zehnder interferometer; high bandwidth; modulator; polarization independence; strain compensated GaInAs/AlInAs tunnelling barrier MQW structure; switching element; time division demultiplexer; travelling wave electrode; travelling wave electrode Mach-Zehnder demultiplexer; tunnelling barrier QW; waveguide network; Capacitive sensors; Couplers; Electrodes; Optical fiber polarization; Optical modulation; Optical polarization; Optical waveguides; Switches; Tellurium; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712488
