DocumentCode
2822854
Title
A novel drie fabrication process development for SOI-based MEMS devices
Author
Li, J. ; Zhang, Q.X. ; Liu, A.Q.
Author_Institution
Microelectron. Div., Nanyang Technol. Univ., Singapore
fYear
2003
fDate
5-7 May 2003
Firstpage
234
Lastpage
238
Abstract
This paper reports a novel deep reactive ion etching (RIE) fabrication process for silicon-on-insulator (SOI) based Micro-electromechanical systems (MEMS) devices. The notching effect and stiction problems that widely exist in SOI based micro fabrication process are solved regardless of the feature sizes by introducing space oxide thin film deposition combined with lateral oxide etching. Dry chemical release is also realized by employing the notching effect. Highspeed optical switch is fabricated by using this new process.
Keywords
elemental semiconductors; micro-optics; micromechanical devices; optical fabrication; optical switches; silicon; silicon compounds; silicon-on-insulator; sputter etching; SOI-based MEMS devices; Si-SiO2; notching effect; optical switch; reactive ion etching; silicon-on-insulator based microelectromechanical systems; thin film deposition; Chemicals; Etching; Microelectromechanical devices; Microelectronics; Optical device fabrication; Optical switches; Packaging; Radio frequency; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Symposium on
Print_ISBN
0-7803-7066-X
Type
conf
DOI
10.1109/DTIP.2003.1287043
Filename
1287043
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