InP-based devices and integrated circuits for millimeter-wave sensor and communication systems

InP-based MMICs demonstrate clear advantages-in comparison to the GaAs-based devices and circuits. They clearly exhibit lower noise and higher gain per stage. For converter and oscillator applications they deliver at least identical performance but at much lower power consumption in comparison to GaAs circuits and will extend the operation frequency to higher values. InP HFET based MMICs will improve the performance of communication and sensor systems operating in the 60 GHz to 94 GHz region and will open the use of 140 GHz for high resolution radar systems. InP-based HBT circuits will push the transition from analog to digital systems further into the higher GHz region enabling the realization of new receiver systems with a high degree of flexibility in signal processing