DocumentCode
2823043
Title
A physical GaAs MESFET model implemented in SPICE
Author
Ayyar, Shekar G. ; Andreou, Andreas G. ; Westgate, Charles R.
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
fYear
1991
fDate
11-14 Jun 1991
Firstpage
2729
Abstract
A new approach is presented for including physical GaAs MESFET models in SPICE. The approach is used to incorporate in SPICE 3d1 a physical model based on a two-piece velocity-field approximation for GaAs. Temperature-dependent effects are included in the physical model. Good agreement between measured and simulated data is obtained
Keywords
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFET model; SPICE; physical model; temperature dependent effects; two-piece velocity-field approximation; Circuit simulation; Current measurement; Electron mobility; Equations; Gallium arsenide; MESFETs; SPICE; Temperature; Threshold voltage; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN
0-7803-0050-5
Type
conf
DOI
10.1109/ISCAS.1991.176110
Filename
176110
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