DocumentCode :
2823214
Title :
Large full-well capacity stitched CMOS image sensor for high temperature applications
Author :
Durini, Daniel ; Matheis, Frank ; Nitta, Christian ; Brockherde, Werner ; Hosticka, Bedrich J.
Author_Institution :
Fraunhofer Inst. for Microelectron. Circuits & Syst. (IMS), Duisburg, Germany
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
130
Lastpage :
133
Abstract :
A novel CMOS pixel architecture is presented, which fulfills the need for acquisition of very high photon fluxes at high temperatures. A buried photodiode based pixel structure was analysed in detail, and then applied to fabricate the 256 × 256 large area imager sensor in a standard 0.5μm CMOS process using mask reticle stitching.
Keywords :
CMOS image sensors; photodiodes; reticles; CMOS pixel architecture; buried photodiode; full-well capacity stitched CMOS image sensor; high temperature applications; mask reticle stitching; pixel structure; size 0.5 mum; Computer architecture; Dark current; Noise; Photodiodes; Pixel; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
ISSN :
1930-8833
Print_ISBN :
978-1-4244-6662-7
Type :
conf
DOI :
10.1109/ESSCIRC.2010.5619823
Filename :
5619823
Link To Document :
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