• DocumentCode
    2823279
  • Title

    A novel method for determining Young´s modulus of thin films by micro-strain gauges

  • Author

    Chi Hsiang Pan

  • Author_Institution
    Nat. Chin-Yi Inst. of Technol., Taichung, Taiwan
  • fYear
    2003
  • fDate
    5-7 May 2003
  • Firstpage
    367
  • Lastpage
    372
  • Abstract
    This work presents a novel method for determining Young´s modulus of thin films with compact micromachined test structures and without using any extra load. The test structures comprise of a pair of micro-strain gauges and a cantilever beam. An analytical model is derived to extract the Young´s modulus of test structures. Notably, both Young´s modulus and residual stress can be simultaneously determined; thus we can correlate Young´s modulus and residual stress. The micromachined test structures employed in the measurement are made of low-pressure chemical-vapor deposition (LPCVD) undoped polycrystalline silicon films. A conventional surface-sacrificial layer micromachining technique with one mask is used to fabricate the structures. The obtained Young´s modulus is reduced a little as residual stress increases. The average value of the obtained Young´s modulus is 169 G Pa, and the residual stress calibrated from the strain gauge is 211 MPa.
  • Keywords
    CVD coatings; Young´s modulus; elemental semiconductors; internal stresses; semiconductor thin films; silicon; Si; Young´s modulus; cantilever beam; compact micromachined test structures; low pressure chemical vapor deposition; mask; microstrain gauges; polycrystalline silicon films; residual stress; Analytical models; Capacitive sensors; Chemicals; Micromachining; Residual stresses; Semiconductor films; Silicon; Structural beams; Testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Symposium on
  • Print_ISBN
    0-7803-7066-X
  • Type

    conf

  • DOI
    10.1109/DTIP.2003.1287070
  • Filename
    1287070