DocumentCode :
2823376
Title :
Monolithically integrated InP-based minority logic gate using an RTD/HBT heterostructure
Author :
Lin, C.-H. ; Yang, K. ; Bhattacharya, M. ; Wang, X. ; Zhang, X. ; East, J.R. ; Mazumder, P. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
419
Lastpage :
422
Abstract :
In this paper, we report on the design, simulation, and fabrication of an InP-based high-speed monolithically integrated minority (inverted majority) logic gate, which was implemented using an MBE-grown stacked-layer epitaxial heterostructure of a resonant-tunneling-diode (RTD) and heterojunction-bipolar-transistor (HBT). The fabricated RTD´s showed a peak-to-valley current ratio of 30 at room temperature and the HBT´s demonstrated a current gain of 65 and a cutoff frequency (fT) of 50 GHz. The minority logic function of the fabricated monolithic RTD-HBT gate was measured using an in-house low-frequency test setup. The detailed full-scale large-signal simulations using the NDR-SPICE simulation program predict that the integrated RTD/HBT minority logic gate can operate up to 10 GHz
Keywords :
III-V semiconductors; SPICE; bipolar logic circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit modelling; logic gates; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor epitaxial layers; threshold logic; 10 GHz; 293 K; InP; MBE-grown stacked-layer; NDR-SPICE simulation; RTD/HBT heterostructure; current gain; cutoff frequency; large-signal simulations; monolithically integrated minority logic gate; peak-to-valley current ratio; Cutoff frequency; Fabrication; Heterojunction bipolar transistors; Logic design; Logic gates; Molecular beam epitaxial growth; Predictive models; Pulse inverters; Resonant tunneling devices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712492
Filename :
712492
Link To Document :
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