DocumentCode :
2823481
Title :
A low-power orthogonal current-reuse amplifier for parallel sensing applications
Author :
Johnson, Bryant ; DeTomaso, David ; Molnar, Alyosha
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
318
Lastpage :
321
Abstract :
We demonstrate a low-noise CMOS amplifier array using orthogonal bias current-reuse to improve fundamental noise-power trade-offs. The architecture presented uses stacking to share bias current among the input differential pairs of four amplifiers. By using the output drain currents of each differential pair as tail currents for the next stage, we save bias current. By arranging the stacked differential pairs appropriately, we generate 16 output currents that encode the original inputs in a linearly independent (orthogonal) fashion. These outputs are then recombined in much lower power output stages to reconstruct amplified versions of the inputs. Our design was built in standard 130nm CMOS and has a noise efficiency factor (NEF) of 2.7, close to the lowest published for a differential amplifier. However, amortizing bias current across the 4 parallel amplifier paths in the NEF calculation yields an effective NEF of 1.54. The input-referred noise ranges from 14.5 ßVrms to 17.4 /iVrm. between amplifiers in the stack over bandwidths of 426 kHz to 530.2 kHz while consuming a total power of 19.6 μ-W, or 4.9 μW per path. Orthogonal biasing avoids cross-talk between stacked amplifier paths, providing isolation of 37 dB or better.
Keywords :
CMOS integrated circuits; differential amplifiers; low-power electronics; bandwidth 426 kHz to 530.2 kHz; differential amplifier; input differential pairs; low-noise CMOS amplifier array; low-power orthogonal current-reuse amplifier; noise efficiency factor; noise-power trade-off; orthogonal bias current-reuse; output drain currents; parallel sensing applications; power 19.6 muW; power 4.9 muW; size 130 nm; tail current; Bandwidth; Crosstalk; Gain; Mirrors; Noise; Stacking; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
ISSN :
1930-8833
Print_ISBN :
978-1-4244-6662-7
Type :
conf
DOI :
10.1109/ESSCIRC.2010.5619839
Filename :
5619839
Link To Document :
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