Title :
A multi-state memory using resonant tunneling diode pair
Author :
Wei, Sen-Jung ; Lin, Hung Chang
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A multistate memory using the resonant tunneling diode (RTD) pair is described. Two RTDs in series can have 2N+1 stable states. With this concept, a five stable states memory cell has been implemented with two 2-peak RTDs. This device should provide high packing density and low power consumption. Encoder and decoder circuits are given as an example to communicate with the computational modules which use binary logic
Keywords :
SRAM chips; many-valued logics; resonant tunnelling devices; semiconductor storage; tunnel diodes; 2-peak RTDs; RTD pair; computational modules; decoder circuits; five stable states memory cell; high packing density; low power consumption; multi-state memory; multistate memory; resonant tunneling diode pair; Circuits; Decoding; Diodes; Educational institutions; Energy consumption; Logic devices; Random access memory; Resistors; Resonant tunneling devices; Voltage;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176157
