A multi-state memory using resonant tunneling diode pair

Author

Wei, Sen-Jung ; Lin, Hung Chang

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1991

fDate

11-14 Jun 1991

Firstpage

2924

Abstract

A multistate memory using the resonant tunneling diode (RTD) pair is described. Two RTDs in series can have 2N+1 stable states. With this concept, a five stable states memory cell has been implemented with two 2-peak RTDs. This device should provide high packing density and low power consumption. Encoder and decoder circuits are given as an example to communicate with the computational modules which use binary logic

Keywords

SRAM chips; many-valued logics; resonant tunnelling devices; semiconductor storage; tunnel diodes; 2-peak RTDs; RTD pair; computational modules; decoder circuits; five stable states memory cell; high packing density; low power consumption; multi-state memory; multistate memory; resonant tunneling diode pair; Circuits; Decoding; Diodes; Educational institutions; Energy consumption; Logic devices; Random access memory; Resistors; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176157

Filename

176157

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2823857