Characterization and simulation of polysilicon TFT-CMOS circuits for HDTV display applications

Author

Kim, D.M. ; Dosluoglu, T. ; Whitlow, D.E. ; Qian, F.

fYear

1991

fDate

11-14 Jun 1991

Firstpage

2928

Abstract

Polysilicon thin-film transistors (TFTs) and TFT-CMOS circuits are processed, characterized and modeled for integrated driver applications in high definition display systems. The I-V characteristics of n- and p-channel TFTs are simulated by adjusting the parameters available in a SPICE MOSFET model. The similarities and differences in SPICE simulation of TFTs and MOSFETs are highlighted. The speed achievable in TFT circuits is discussed using time response of basic subcircuits. The performance of static scan drivers and subcircuits is also simulated and discussed

Keywords

CMOS integrated circuits; digital integrated circuits; driver circuits; high definition television; semiconductor device models; thin film transistors; HDTV display applications; I-V characteristics; SPICE MOSFET model; SPICE simulation; TFT circuits; TFT-CMOS circuits; characterisation; high definition display systems; integrated driver applications; polycrystalline Si transistors; polysilicon; simulation; speed achievable; static scan drivers; time response; Circuit simulation; Driver circuits; Electron traps; Flat panel displays; HDTV; MOSFET circuits; SPICE; Space charge; Temperature sensors; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176158

Filename

176158