A 6-7GHz CMOS receiver frontend with a wide frequency tuning range

Author

Lee, Koon Hung ; El-Gamal, Mourad N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1167

Abstract

This paper presents a fully integrated RF receiver frontend for the 6-7-GHz range, intended for future satellite applications, implemented in a standard 0.18 μm CMOS technology. It consists of a differential low noise amplifier, an active mixer, two passive mixers, and a quadrature voltage-controlled oscillator. The complete receiver is packaged in a standard 80-pin ceramic flat pack (CFP) and consumes 85 mW from a 1.8-V supply. Measurement results show that the receiver has an overall gain of 8 dB, a -5.5 dBm input-referred third-order intercept point (IIP3), and an image-rejection ratio (IRR) of 45 dB, without using any image rejection filters.

Keywords

CMOS integrated circuits; differential amplifiers; microwave receivers; mixers (circuits); radio receivers; voltage-controlled oscillators; 0.18 micron; 1.8 V; 45 dB; 6 to 7 GHz; 8 dB; 85 mW; CMOS receiver frontend; CMOS technology; RF receiver frontend; active mixer; ceramic flat pack; differential low noise amplifier; image-rejection ratio; input-referred third-order intercept point; passive mixer; quadrature voltage-controlled oscillator; wide frequency tuning range; Active noise reduction; CMOS technology; Differential amplifiers; Low-noise amplifiers; Packaging; Radio frequency; Radiofrequency amplifiers; Satellites; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562501

Filename

1562501