A direct conversion CMOS RF front-end for IEEE 802.11a wireless LAN

Author

Yoon, Ho-Kwon ; Ismail, Mohammed

Author_Institution

Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1171

Abstract

A direct conversion CMOS RF front-end for IEEE 802.11a wireless LAN is presented. The RF front-end is fully integrated, including LNA, SDC, and direct-conversion I/Q mixers using 0.18μm CMOS technology. The RF front-end provides dual gain mode, 25dB or 15dB, to alleviate the linearity requirements of the following stages. It also presents low noise figure and high linearity in the frequency band of interest. The noise figure, IIP3, and IIP2 are 4.9dB, -14dBm, 34.6dBm for high gain mode, and 10.8dB, -3.2dBm, 45.4dBm for low gain mode, respectively. The power consumption of the RF front-end is considerably reduced by using zero-IF architectures and only 22.8mW from a 1.8V supply voltage. The corner frequency of the flicker noise is only 60KHz. The bondpad and package parasitics are also taken into account for the design and simulation.

Keywords

CMOS integrated circuits; flicker noise; radio receivers; wireless LAN; 0.18 micron; 1.8 V; 15 dB; 22.8 mW; 25 dB; 60 kHz; CMOS technology; IEEE 802.11a wireless LAN; LNA; SDC; bondpad parasitics; direct conversion CMOS RF front-end; direct-conversion I/Q mixers; dual gain mode; flicker noise; frequency band; high gain mode; low gain mode; noise figure; package parasitics; power consumption; zero-IF architecture; 1f noise; Bonding; CMOS technology; Energy consumption; Linearity; Mixers; Noise figure; Radio frequency; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562502

Filename

1562502