A fully integrated dual band GSM/DCS direct conversion transmitter

Author

Aboueldahab, Waleed F. ; Elhak, Hany Y. ; Sharaf, Khaled M.

Author_Institution

MEMSCAP Egypt, Cairo, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1223

Abstract

This paper describes the design and implementation of a dual band GSM/DCS direct conversion transmitter. The chip is implemented in a 0.8 μm SiGe BiCMOS process with ft of 35 GHz. The 3.1×1.9 mm² chip is packaged in a TQFP44 ceramic package and operates at a supply voltage of 2.7-3.3 V. The transmitter delivers an output power up to 7 dBm to a 50 Ω load. An LO leakage of less than -40 dBc, an image rejection ratio in excess of 50 dBc and harmonic suppression of more than 50 dBc are achieved. The transmitter IC consumes 33 mA in each of the GSM or the DCS band from 3V power supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; ceramic packaging; integrated circuit layout; millimetre wave devices; transmitters; 0.8 micron; 1.9 mm; 2.7 to 3.3 V; 3 V; 3.1 mm; 33 mA; 35 GHz; 50 ohm; BICMOS process; DCS band; GSM band; SiGe; TQFP44 ceramic package; direct conversion transmitter; harmonic suppression; transmitter IC; BiCMOS integrated circuits; Ceramics; Distributed control; Dual band; GSM; Germanium silicon alloys; Packaging; Silicon germanium; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562515

Filename

1562515