DocumentCode :
2824262
Title :
Dual-band UV/IR optical sensors for fire and flame detection and target recognition
Author :
Starikov, David ; Boney, Chris ; Pillai, Rajeev ; Bensaoula, Abdelhak
Author_Institution :
Integrated Micro Sensors Inc., Houston, TX, USA
fYear :
2004
fDate :
2004
Firstpage :
36
Lastpage :
40
Abstract :
Several military and industrial applications require simultaneous or at least spatially synchronized detection of optical emissions in different spectral regions. The ability to grow III nitrides on Si wafers is considered to be key to the development of multi-color detectors ranging from the UV to IR wavelengths. GaN/InGaN p-n heterostructures grown on Si wafers indicated sensitivity in a wide spectral range from near UV to near IR. Employment of Schottky barrier photodiode structures based on AlGaN alloys allows extension of the spectral sensitivity further into the UV range beneficial for solar-blind sensing. An alternative way to combine sensitivities in separated IR (provided by silicon) and UV (featured by III nitrides) bands by employment of commercially available silicon-on sapphire (SOS) wafers is discussed.
Keywords :
Schottky diodes; gallium compounds; indium compounds; optical sensors; photodiodes; wide band gap semiconductors; GaN-InGaN; Schottky barrier photodiode structures; dual band IR optical sensors; dual band UV optical sensors; fire detection; flame detection; infrared optical sensors; multicolor detectors; p-n heterostructures; silicon on sapphire wafers; solar blind sensing; spectral sensitivity; target recognition; ultra violet optical sensors; Defense industry; Dual band; Employment; Fires; Gallium nitride; Infrared detectors; Optical detectors; Optical sensors; Stimulated emission; Target recognition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors for Industry Conference, 2004. Proceedings the ISA/IEEE
Print_ISBN :
0-7803-8143-2
Type :
conf
DOI :
10.1109/SFICON.2004.1287124
Filename :
1287124
Link To Document :
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