Power conversion efficiency in DC-to-RF MOS-FET high power inverter operating at 2.5 MHz

Author

Ikeda, Hiroaki ; Suzuki, Taiju ; Hayeiwa, Kazuhisa ; Yoshida, Hirofumi ; Shinohara, Shigenobu

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

fYear

1991

fDate

11-14 Jun 1991

Firstpage

3035

Abstract

A description is presented of how to increase the power conversion efficiency in a full-bridged DC-to-RF MOS-FET power inverter consisting of four MOS-FET arrays, each array consisting of six MOS-FETs to enhance the output power to 1 kW at a frequency of 2.5 MHz. Although the voltage-fed type has a total DC-to-RF power conversion efficiency of over 60% in the supplied DC voltage range of 80 to 180 V, the current-fed type has a total DC-to-RF power conversion efficiency of over 80% in the same DC voltage range. Data were obtained at the output powers ranging from 250 to more than 1000 W when the square-wave output voltage was fed to the resistive load whose characteristic impedance was 50 Ω when the load was used as an RF heater

Keywords

bridge circuits; field effect transistor circuits; insulated gate field effect transistors; invertors; power amplifiers; power transistors; radiofrequency amplifiers; 2.5 MHz; 250 to 1000 W; 80 percent; 80 to 180 V; DC RF power conversion; DC voltage range; MOSFET invertor; RF heater; RF invertor; characteristic impedance; frequency; full bridge invertor; output power; power conversion efficiency; power inverter; resistive load; square-wave output; Broadcasting; Circuits; Frequency conversion; Impedance; Inverters; Phased arrays; Power conversion; Power generation; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176185

Filename

176185