DocumentCode
2824615
Title
A large-signal neural network model for the dual gate MESFET
Author
Abdeen, M. ; Bennett, J. ; Yagoub, M.C.E.
Author_Institution
SITE, Ottawa Univ., Ont., Canada
Volume
3
fYear
2003
fDate
27-30 Dec. 2003
Firstpage
1323
Abstract
The paper presents for the first time a large-signal neural model of the dual-gate MESFET. The neural model is a five-layer perceptrons (MLP5) with one input, one output, and three hidden layers. The model is based on pulsed I-V measurements to better represent the RF device behavior and to neutralize the effect of channel heating on the model accuracy. The neural model is shown to be in an excellent agreement with measurements (with an error less than 1%).
Keywords
Schottky gate field effect transistors; circuit CAD; perceptrons; RF device; channel heating; dual gate MESFET; five-layer perceptrons; neural network model; pulsed I-V measurements; Current measurement; Dispersion; Electrical resistance measurement; FETs; MESFETs; Microwave devices; Neural networks; Pulse measurements; Radio frequency; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562539
Filename
1562539
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